usm11spt t h r u usm18spt c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t g l a s s p a s s i v a t e d e l e c t r i c a l c h a r a c t e r i s t i c s ( a t t a = 2 5 o c u n l e s s o t h e r w i s e n o t e d ) notes : 2004-07 m a x i m u m f u l l l o a d r e v e r s e c u r r e n t a v e r a g e , f u l l c y c l e a t t a = 5 5 o c c h a r a c t e r i s t i c s symbol u n i t s 1.27 0.95 1.75 5.0 35 45 u a m p s 50 uamps n s e c v o l t s m a x i m u m i n s t a n t a n e o u s f o r w a r d v o l t a g e a t 1 . 0 a d c m a x i m u m d c r e v e r s e c u r r e n t a t r a t e d d c b l o c k i n g v o l t a g e a t t a = 2 5 o c m a x i m u m r a t i n g e s ( a t t a = 2 5 o c u n l e s s o t h e r w i s e n o t e d ) r a t i n g s m a x i m u m r e c u r r e n t p e a k r e v e r s e v o l t a g e m a x i m u m r m s v o l t a g e m a x i m u m d c b l o c k i n g v o l t a g e m a x i m u m a v e r a g e f o r w a r d r e c t i f i e d c u r r e n t t l = 1 1 0 o c p e a k f o r w a r d s u r g e c u r r e n t 8 . 3 m s s i n g l e h a l f s i n e - w a v e s u p e r i m p o s e d o n r a t e d l o a d ( j e d e c m e t h o d ) t y p i c a l j u n c t i o n c a p a c i t a n c e ( n o t e 1 ) o p e r a t i n g a n d s t o r a g e t e m p e r a t u r e r a n g e symbol v rrm v rms v dc i o c j v f m a x i m u m r e v e r s e r e c o v e r y t i m e ( n o t e 2 ) trr i r t j , t stg i fsm u n i t s v o l t s v o l t s v o l t s a m p s usm11spt 50 35 50 usm13spt 200 140 200 usm14spt 210 300 300 usm15spt 400 280 400 usm16spt 600 420 600 usm18spt 1000 700 1000 USM17SPT 800 560 800 1.0 30 1 5 10 -65 to +150 a m p s p f o c usm12spt 100 70 100 1 . m e a s u r e d a t 1 . 0 m h z a n d a p p l i e d r e v e r s e v o l t a g e o f 4 . 0 v o l t s 2 . t e s t c o n d i t i o n s : i f = 0 . 5 a , i r = - 1 . 0 a , i r r = - 0 . 2 5 a features *small surface mounting type. (sod-123s) circuit (1) (2) i r * low forward voltage, high current capability * low leakage current * metallurgically bonded construction * glass passivated junction * high temperature soldering guaranteed : 260 o c/10 seconds at terminals usm11spt usm13spt usm14spt usm15spt usm16spt usm18spt USM17SPT usm12spt sod-123s super fast silicon rectifier voltage range 50 - 1000 volts current 1.0 ampere 1.4~1.95 2.55~3.0 0.5~1.0 0.25(max) 3.5~3.95 0.8~1.35 0.25(min) dimensions in millimeters sod-123s
rating characteristic curves ( usm11spt thru usm18spt ) fig. 1 - test circuit diagram and reverse recovery time characteristic fig. 3 - typical reverse characteristics fig. 4 - typical instantaneous forward characteristics fig. 6 - typical junction capacitance fig. 5 - maximum non-repetitive forward surge current instantaneous reverse current, (ua) peak forward surge current, ( a ) junction capacitance, ( pf ) reverse voltage, ( v ) number of cycles at 60 hz instantaneous forward voltage, ( v ) percent of rated peak reverse voltage, ( % ) instantaneous forward current, ( a ) noninductive noninductive d.u.t ( + ) 25 vdc (approx) ( - ) 1 non- inductive oscilloscope (note 1) pulse generator (note 2) ( - ) ( + ) notes: 1. rise time = 7 ns max. input impedance = 1 megohm. 22 pf. 2. rise time = 10 ns max. source impedlance= 50 ohms. +0.5a 0 -0.25a -1.0a trr 1cm set time base for 10 ns/cm average forward current, ( a ) lead temperature ( o c ) fig. 2 - typical forward current derating curve single phase half wave 60hz resistive or inductive load 1.0 0.5 0 25 0 50 75 100 125 150 175 10 1.0 0.1 .01 .001 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 pulse width = 300us 1% duty cycle t j =25 o c t j =25 o c t j =25 o c t j =75 o c t j =100 o c .01 .1 1.0 10 100 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 1 2 5 10 20 50 100 35 30 25 20 15 10 5 0 8.3m s single h alf sine - wa v e ( j e dec metho d) 50 10 usm11spt~usm14spt usm11spt~usm15spt usm16spt~usm18spt usm15spt usm16spt~usm18spt
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